Nanoengineering the second order susceptibility in semiconductor quantum dot heterostructures

Intraband transitions in quantum dot-superlattice heterostructures

Dependence of second order nonlinear susceptibility and efficiency on shape of CdS quantum dot

This paper deals with the dependence of second order nonlinear susceptibility and second harmonic generation (SHG) efficiency on the shape of CdS quantum dot. A relation has been found between the electronic structure and second order nonlinear susceptibility. The effective mass approximation has been used to find the energy levels. We have considered both intra band and inter band near resonan...

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon densi...

Semiconductor double quantum dot micromaser.

The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semicondu...

A Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers

With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...